高热导率低热膨胀系数Cu-ZrW2O8复合材料的制备与性能.pdf

第14卷第5期
粉末冶金材料科学与工程
2009年10月
Vol 14 No5
Materials Science and Engineering of Powder Metallurgy
Oct.2009
高热导率低热膨胀系数Cu-ZrW2Os复合材料的制备与性能
彭車玮,李劲风,郑子樵
(中南大学材料科学与工程学院,长沙410083)
摘要:以负热膨胀材料ZrW2O8与金属Cu为原料,分别采用常规烧结法和热压法制备具有高热导率低膨胀系数
的新型Cu基复合材料Cu-ZrW2O8,研究ZrW2O。体积分数与烧结方法对该复合材料致密度、热导率及热膨胀系
数的影响。结果表明:热压法制备的Cu-50%ZrW2Os复合材料的热导率达173.3W(mK,致密度为91.6%,均明
显高于常规烧结样品;热压样品的热膨胀系数为11.2×10°K,稍高于常规烧结样品;在150~300℃温度范围
内热处理后该样品的平均热膨胀系数降低到10.87×10°K,较纯Cu的平均热膨胀系数17×106K低很多,有
望成为一种新型的电子封装材料。
关键词:负热膨胀:Cu-Zrw-Os复合材料;热压:热导率:热膨胀系数
中图分类号:TQ174
文献标识码:A
文章编号:1673-0224(2009)5-337-06
Preparation and properties of Cu-zrw2os composites with
high thermal conductivity and low thermal expansion coefficient
PENG Zhuo-wei, L Jin-feng, ZHENG Zi-qiao
School of Materials Science and Engineering, Central South University, Changsha 410083, China)
Abstract: The Cu based composite with low thermal expansion rate and high thermal conductivity has been fabricated by
conventional sintering and hot-press methods using Zr W2og and Cu as raw materials. The effect of the volume fraction
Zr% and sintering method on density, thermal conductivity and thermal expansion coefficient of the Cu-zrw20
composites has been studied. The results show that the composite fabricated through hot-press has higher density than
that of fabricated through conventional sintering The Cu-0%Zr WO (volume fraction )composite fabricated through
hot-press has a thermal conductivity of 173.3 W/(m K), a relative density of91.6%, and a thermal expansion coefficient
of 11. 2X 10 K.The average thermal expansion coefficient(150 300) of Cu-5ovol% Zrw2og composite is 10.87
X10K after heat treatment, which is much lower than that of pure Cu (17X 10K). The Cu-50%Zrw202(volume
fraction )composite is expected to become a new type of electronic packaging materials
Key words: negative thermal expansion; Cu-zrw2o composite; hot-press; thermal conductivity; thermal expansion
coefficient
作为电子封装材料,必须满足以下基本要求:
的金属如Cu、Al等与具有低膨胀系数的Si、W、SiC、
是材料的导热性能好,能够将半导体芯片在工作时所石墨等,复合制成低膨胀、高导热的复合材料2?。自
产生的热量及时散发出去:二是材料的热膨胀系数从 SLEIGEIT发现钨酸错(ZrW2Os)具有负热膨胀特性
(CTE)要与Si或GaAs等芯片相匹配,以避免芯片的以来,研究人员从物理学的角度解释了负热膨胀相关
热应力损坏。有时还要求材料具有较低的密度,以减机理,并对钨酸锆的性质如相结构、高温转变以及制
轻器件的质量和适应轻量化的要求
备技术等进行了大量研究?。鉴于ZrW2O2的负热膨
传统电子封装用材料,一般采用具有高导热性能胀性质,若将其与Cu、AI等高导热金属复合,有望
基金项目:基础科研项目(A14200601
收稿日期:2009-03-26;修订日期:2009-05-07
通讯作者:李劲风,副教授,博士;电话:0731-8830270;E-mail:jinfeng(@mail.su.edu.cn