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类型SEMI E14-93 MEASUREMENT OF PARTICLE CONTAMINATION CONTRIBUTED.pdf

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    SEMI E14-93 MEASUREMENT OF PARTICLE CONTAMINATION CONTRIBUTED E14 93
    资源描述:
    SEM E14-93
    MEASUREMENT OF PARTICLE CONTAMINATION CONTRIBUTEDTO
    THE PRODUCT FROMTHE PROCESS OR SUPPORT TOOL
    CONTENTS
    I introductio
    1.1 Purpose
    1. 2 Scope and Application
    3 Protocols
    1 4 Impact
    1.5 Limitations
    2 Referenced Documents
    erminolog\
    4 Measurement nstrument Eyaluation
    4. 1 Methodology for Instrument Acceptance
    4.2 Procedure for Instrument Calibration Acceptance
    5 Measurement Instrument Monitoring
    5. 1 Methodology for Instruments Monitoring
    5.2 Procedure for Instrument Monit
    5.3 Out-of-control Acti
    6 Measuring PWP for Process Tool Acceptance
    gy
    for Process Tool Ac
    for P
    Tool Acceptance
    7.1 SPC
    Suggested Procedure for Process Tool Particle
    ng
    8 Additional R
    mn Preparing PSL Calibration Wafe
    A 2 Notes on Measurement Instrument Calibration
    A3 Notes on Measurement Instrument Monitoring
    A4 Notes on Process Tool Monito
    SEME14-93SEMI1990.1996
    NOTES
    This page intentionally left blank
    SEM F14-93
    MEASUREMENT OF PARTICLE CONTAMINATION CONTRIBUTEDTO
    THE PRODUCT FROMTHE PROCESS OR SUPPORT TOOL
    Introduction
    and out of an ellipsometer to the full simulation of a
    This document describes the methods, procedures, and
    CVD process including transport of a wafer into
    application of a technique for determining the average
    quartzware, pushing quartzware into a reactor chamber,
    number of particles added to a wafer as a result of the
    multiple purge/vent cycles, process simulation with
    wafer being passed through a semiconductor process
    inert gas flow including establishment of process pres
    tool
    sure, temperature ramping and soak, venting, cooldown
    and transport back to the cassette. Although this proce-
    1. 1 Pumpose-the purpose of this document is to pro-dure may be extended to actual fabrication processes, it
    vide a standardized methodology and detailed procedure is primarily intended to be used to quantify contamina
    for measuring the contamination performance of a par- tion added by a process tool and not by the actual pro
    ticular process or tool in terms of the number and size cess
    distribution of particles added to a silicon wafer as a
    result of having been passed through that process tool. The measurement of PWP performance is in terms of
    This standardized procedure is primarily intended to be
    particles located on the front surface of the wafer; it
    used for the qualification of new or repaired processing
    does not apply to particles on the back surface of the
    equipment, but may be extended to new processes or
    rafer. It is important that both the customer and supplier
    methods, continuous process or tool monitoring, and
    follow the same test method. This will help to ensure
    qualification of new materials. As a result, this docu
    Ice on the same level and
    ment contains supporting information; however, one
    that actual performance of the equipment is discussed
    may not need to read all of the information to determine 1.3 Protocols-figurel shows the sections included
    the particles per wafer pass(PWP)of the process tool
    in the applications portion of this document. The section
    The measurement of surface particulate contamination
    of most importance is Section 6. This section details
    on a wafer as i
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