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类型SEMI C3.18-94 STANDARD FOR DICHLOROSILANE (H2SiCl2) IN CYLINDERS.pdf

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    SEMI C3.18-94 STANDARD FOR DICHLOROSILANE H2SiCl2 IN CYLINDERS C3 18 94 H2SiCl2
    资源描述:
    SEMI C3.18-94
    STANDARD FOR DICHLOROSILANE ( H2SIC12)IN CYLINDERS,
    97 QUALITY
    1 Description
    Metric units
    US Uni
    Dichlorosilane is a flammable. corrosive. colorless lig
    lid which hydrolizes in the presence of moisture. It Specific gravity ofgas at 3.48
    3.48
    adily and rapidly to release hydrogen chl
    21.1C(70 F)and I atm
    ride. It is easily ignited in the presence of air
    Density of liquid at 122 kg/m
    7.621b/r
    2 Specifications
    25"C(77"F)
    QUALITY: 97%(iquid)(See Notes 1, 2, 3, 4)
    5 Analytical Procedures(See Note 5)
    5.1 Other Chlorosilanes-this procedure is for the
    Impurities
    Maximum Acceptable 1envels'*
    determination of other chlorosilanes(monochlorosi
    All Other Chlorosilanes 3%(liquid phase)
    lane, trichlorosilane and silicon tetrachloride) in
    dichlorosilane using a gas ch
    ph with a th
    Silicon Tetrachlorid
    mal conductivity detector
    T'rich lorosilanc)
    5.1.1 Detection Limit- 10 ppm(mole/mole
    Aluminum
    I ppb (vapor phasc dcrivcd)
    5. 12 1ns/men/ Parameters
    Arsenic
    0.5 ppbw (vapor phase derived)
    Boron
    0.3 ppw (vapor phasc dcrivcd
    1.2.1 Column: 3.05 m(10 ft )by 3.2 mm(1/8 in)
    stainless steel tubing packed with 20% OV-101 on 80/
    Carbon
    10 ppmw(vapor phase derived)100 Chromosorb W-HP or equivalent
    50 ppw (liquid phase
    12. 2 Carrier Flow: 20 ml/min helium
    Phosphorus
    0.3 ppw (vapor phase derivcd 5.1.2.3 Sample Volume: 0.5 to 1.0 ml
    The number of significant figures will be based on analytica/ 5. 1. 2.4 Temperatures
    An analysis of significant figures has not been considered
    accuracy and the precision of the providcd proccdurc
    Detector
    350°C
    3 Electrical Specification
    Column
    60C ramped to 325C at 10C/min
    Inict
    300°C
    Resistivity, i
    greater than 50 ohm-cm (n-type)**e
    Thc resistivity mcasurcmcnt tcchniquc is to be dctcrmincd 5.1.3 pealing Procedure
    bctwccn supplier and uscr
    5.1.3.1 Inject a known sample of monochlorosilane
    * Monocrystalline silicon formed from this material, not the trichlorosilane and silicon tetrachloride in dichorosi
    material itself
    lane into the column using a gas sampling valve
    Record the retention times and peak areas. The order
    4 Physical Constants(for information only
    of elution is monochlorosilane. dichlorosilane. trichlo
    rosilane. sillicon tetrachloride
    Metric nils
    U.S Units
    5.1.3.2 Inject the sample to be tested in the same
    Molccular wcight
    100.99
    100.99
    manner as in.1.3.1. Record the areas of the peaks
    Boiling point al I atm
    8.2"C
    46.8F
    which have the same retention times as those in
    5.1.3.1
    of gas at 25C 4.168 kg/m
    2601b/ft
    (77F)and I atm
    5.1.3.3 Repeat5.1.3
    SEMI C3.18-940SEMI1982,1996
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