氮化硅陶瓷回转曲面零件化学机械抛光工艺实验研究.pdf

工さ与俭洲 Technology and Test
氮化硅陶瓷回转曲面零件化学机槚
抛光工艺实验研
邓朝晖2王超登2万林林12张晓红02
(①湖南大学机械与运載工程学院,湖南长沙410082)
(②湖南大学国家高效磨削工程技术研究中心,湖南长沙410082)
摘要:在数控坐标磨床上应用化学机械抛光( Chemo- mechanical polishing,CMP)技术,对氮化硅陶瓷回
转曲面零件进行超精密加工工艺实验研究。分析了氮化硅陶瓷化学机械抛光原理,并搭建化学机械
抛光实验平台。通过实验研究了水基CeO2抛光液浓度、抛光液流量、抛光轮转速等主要工艺参数对
氮化硅陶瓷零件抛光的表面质量的影响规律,根据实验结果对抛光工艺参数进行了优选。结果表
明:在抛光液浓度为20%,抛光液流量为0.6L/min,抛光轮转速为6000r/min的条件下,能获得
较好的抛光表面质量,其表面粗糙度R。达12mm。
关键词:氮化硅陶瓷化学机械抛光回转曲面零件表面粗糙度
中图分类号:TD406文献标识码:A
Experimental study on revolving curved surface of silicon nitride
ceramics in chemo-mechanical polishing process
DENG Thaohui- ANG Chaoden I WAN Linlin, ZHANG 2
( College of Mechanical and Vehicle Engincering, Hunan Uuiversity, Changsha 410082, CHN
(2 National Engineering Center for High Efficiency Grinding Research
Hunan University, Changsha 410082, CIN
Abstract: By the chemo-mechanical polishing (CMP) technology, ultra-precision processing experiment was car-
ried out on a CNC jig grinding machine for the revolving curved surface parts of silicon nitride ceramic
First the CMP principles about silicon nitride ceramic were analyzed, and the CMP experiment platform
was built on the CNC jig grinding machine. The influence of polishing parameters on the polishing sur
face quality was studied on the water-based Ceo polishing slurry, such as concentration and flowing
rate of polishing slurry, rotation speed of polishing wheel; and the polishing parameters were optimized
according to the experiment result. The result shows that perfect polishing surface can obtained under
the parameters of polishing slurry concentration of 20%, flowing rate of polishing slurry of 0.6 L/min
and rotation speed of 6 000 r/min. The surface roughness achieves 12 nm
Keywords: Silicon Nitride Ceramics; Chemo-mechanical Polishing; Revolving Curved Surface; Surface Rough
氮化硅陶瓷材料以其强度高、耐高温、耐化学腐蚀陷,无法获得高质量的氮化硅表面,影响零件的使用性
等优良性能在工业和国防等领域得到广泛应用。对于能3。
氮化硅陶瓷的超精密加〖一般采用研磨的加工方
化学机被抛光是机械磨削和化学腐蚀相结合的技
式2。由于氮化砫陶瓷自身的硬、脆特性,研磨加工术。它借助微粒子的研磨以及抛光研磨液的化学腐蚀
易在氮化硅陶瓷表面产生划痕和残余应力等表面缺作用在加工工件表面上形成光洁表面。氮化硅陶
国家“863”高科技发展计划资助重点项目(2009A(44306)
2011年第6期