SEMI M42-1000 SPECIFICATION FOR COMPOUND SEMICONDUCTOR.pdf

sem
SEMI M42-1000
SPECIFICATON FOR COMPOUND SEMCONDUCTOR EPTAXAL
WAFERS
This specification was technically approved by the Global Cor
Semiconductor Committee and is the
direct responsibility of the North American Compound Semiconductor Committee. Current edition approved
by the North Amcrican Rcgional Standards Commitcc on August 28, 2000. Initially available at
www.scmi.orgScptcmbcr2000;tobcpublishedOctobcr2000
F673
andard Test Methods for Me
1 Purpose
g
Resistivity of Semiconductor Slices or Sheet Resistance
1. 1 Compound semiconductor epitaxial layers have of Semiconductor Films with a Noncontact Eddy
been extensively used for many years as the basis of Current Gage
high speed electronics and optoelectronic devices
There are suppliers of epitaxial layers who will grow
3.3 DIN Standar
material to the customers specification. There is a DIN 50447
Contactless Determination of the
need to define standardized descriptive terms, tolerance Electrical Sheet Resistance of Semiconductor Layers
chedules and recommended test methods to reduce with the Eddy Current Method
ambiguity in the interpretation of specifications for
such wafers. Special emphasis is placed on the
4 Terminology
definitions pertaining to uniformity. This proposed
document addresses only the basic requirements
4.1 epitanxy-the growth of a sing le crystal layer on a
Irther clarification may be required between supplier
substrate of the same material. homoepitaxy: or on a
and purchaser for the particular layers required
substrate of different material with compatible crystal
structure, heteroepitaxy
2 Scope
4.2 fixed quality area FOA)-(re
2.1 These specifications cover the requirements fol
SEMI MI) the central area of the wafer surface, defined
epitaxial layers of the generic composition A B,C
by a nominal edge exclusion, X, over which the
grown on monocrystalline wafers of GAAS or Inp(other specififed values of a parameter apply
substrates may be considered where appropriate 4.3 mismatch-the ratio, m defined by the lattice
documents exist to describe the specification of th
constant of the epitaxial layer perpendicular to the
substrate). This document may only cover a portion of surface. c. minus that of the substrate, a divided by the
the properties considered to be part of the purchase substrate lattice constant
specification
c-a)a
2.2 This specification does not purport to address
safety issues, if any, associated with its use. It is the 4.4 mole fh
)- the normalized fraction of a
responsibility of the users of this specification to particular element occupying the same lattice site in a
establish appropriate safety and health practices and compound. E.g. in the compound A, B, CED, a, b, c and
determine the applicability of regulatory limitations d are the mole fractions of the elements A. B C and D
prior to use
respectively. If, in this example, A and B share the
same lattice site. and C and D share the other lattice
3 Referenced Standards
site, then by definition the sum of a and b and the sun
of c and d each must be
3.1 Semstandarc
SEMII MI
Specifications for Polished
4.5 graded layer-a layer whose properties
Monocrystalline Silicon Wafers
smoothly i