锑掺杂量对ATO薄膜结构及光、电性能的影响.pdf

第44卷第1期
无机盐工业
2012年1月
INORGANIC CHEMICALS INDUSTRY
锑掺杂量对ATO蓴膜结构及光、电性能的影响
杨保平,钟小华·,张晓亮,佳锦峰',贾均红2,易戈文2
(1.兰州理工大学石油化工学院,甘肃兰州730050;2.中国科学院兰州化学物理研究所固体润滑国家重点实验室)
摘要:以四氯化锡和三氯化锑为主要原料,采用溶胶一凝胶法制备了不同锑掺杂量的纳米锑掺杂二氧化锡
(ATO)薄膜。分别利用XRD、 FESEM、紫外可见分光光度计和四探针电阻仪对晶体结构、薄膜形貌、光透过率和薄
膜方块电阻进行表征,考察锑掺杂量对ATO薄膜晶体结构、晶粒尺寸、光透过率和导电性能的影响。结果表明:所
制备的AT0薄膜为(110)面择优取向的四方相锡石结构,晶粒尺寸小于26nm,当锑掺杂量为10%(物质的量分
数)时,ATO薄膜具有最小的方块电阻(60.10/ロ),可见光透过率大于85%
关键词:ATO纳米薄膜;b掺杂量;sol-gel法;光透过率;方块电阻
中图分类号:TQ135.31文献标识码:A文章编号:1006-4990(2012)01-0019-03
Effects of Sb doping amount on structure and transmission, electric property of ATO films
Yang Baoping Zhong Xiaohua"", Zhang Xiaoliang,Cui Jinfeng Jia Junhong", Yi Gewen
I School of Petrochemical echnolog, a how Univers y of echnology, Lanzhou 730050, China
2. State Key Laboratory of Solid Labrication, Lanzhou Institute of Chemical Physics, Chinese Academy of Sciences
Abstract: sing ol -el method and with Sncl and Sl, as raw materials, antimony doped tin oxide ATO films
with different S doping amounts were synthesized. Microstructure, film morphology, transmission, and sheet resistance were
characterized by XRD, FESEM, Uv-visible spectroscopy, and fourprobe resistivity/ square resistance tester, and the effects
of Sb doping amounts on crystalline micr ur, r stal size, ammiss on, and conductivity properties of the ATO film
were investigated systematically. Results showed that the prepared ATO films had tetragonal cassiterite structure and the pre
ferred orientation was observed as(110 )plane, the average crystal size was less than 26 nm, and its sheet resistance was ob
tained to be the lowest 60.1/D when the Sb content was 10%(molar fraction ), and the transmission was above 85% in
the visible light rangc
Key words: ATO films; Sb doping amounts; sol-gel method; transmission; sheet resistance
悌掺杂二氧化锡(ATO)薄膜具有优异的电学加人不同质量的SCl3。磁力搅拌10min左右得到
性能和光学性能。用于制备ATO的方法主要有溶透明澄清溶液,再滴加一定量的超纯水,室温下磁力
胶一凝胶法(sol-gel)リ、水热法2、溶剂热法』、搅拌4.0h,经室温陈放老化24bh后得到溶胶
配合-均相沉淀法和溶解一热解法等。
1.2基片的处理
gel法具有制备设备简单、可在形状复杂的基底上涂
将石英片切成25mmx25mx1m规格,分
膜、原料便宜和掺杂量容易控制等优点?。因此,别用丙酮、超纯水和硝酸超声洗涤,N2吹千,在90℃
笔者采用sol-gel法制备ATO,考察了Sb掺杂量对于30%的H2O2和9%浓H12S04混合液(体积比为
其晶体结构、晶粒尺寸、光性能和电性能的影响。
3:7)中处理1.0h,超纯水洗涤,N2吹干。
1实验部分
1.3纳米ATO薄膜的制备
采用旋转涂膜法制备纳米ATO薄膜。用吸管
1.1溶胶的制备
吸取10滴制备好的溶胶滴加到已处理好的石英片
实验中所用到的试剂均为分析纯。将13.04g上,开启匀胶机,先500r/min旋涂10s,然后
SnCl4滴加到无水乙醇中,待其溶解后按b掺杂量1000r/min涂20s,再3000r/min涂30s。将涂好
*基金项目:国家自然科学基金资助项目(50705094);中国科学院“百人计划”资助项目(KGCX2-YW-804)。