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类型SEMI M1.15-1000 STANDARD FOR 300 mm POLISHED MONOCRYSTALLINE.pdf

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    SEMI M1.15-1000 STANDARD FOR 300 mm POLISHED MONOCRYSTALLINE M1 15 1000
    资源描述:
    Se∩
    SEMI M1.15-1000
    STANDARD FOR 300 mm POLISHED MONOCRYSTALLINE SILICON
    WAFERS(NOTCHED
    This standard was technically approved by the Global Silicon Wafer Committee and is the direct
    responsibility of the North American Silicon Wafer Committee. Current edition approved by the European
    RcgionalStandardsCommillcconjuly28,2000.Initiallyavailablcalwww.scmiorgScptcmbcr2000;tobe
    published October 2000. Originally published 1997, prcviously published Junc 2000
    1 Referenced Standard
    identification of these wafers and traceability of each
    wafer back to the ingot from which it was cut. The back
    1.1 SEM Standard
    urface is identified as the wafer surface with the two
    SEMI MI2 - Specification for Alphanumeric Marking dimensional matrix code symbol
    of the Front Surface of Silicon Wafers
    2.1.4 Optionally, the user may specify that no mark be
    SEMI T7-specification for Back Surface Marking of placed on the wafer
    Double-side Polished Wafers with a Two-dimensional NOTE 2: It is cxpcctcd that thc option ofno mark will
    Matrix Code Symbol
    eventually bccomc obsolete aftcr or if cxpcricncc with
    SEMI T7 mark dcmonstralcs success
    1.2 ASTM Standards
    D 523- Test Method for Specular Gloss
    back-surface mark (Note 3) that contains alphanumeric
    F1530
    Test Method for Measuring Flatness. characters with
    Thickness, and Thickness Variation on Silicon Wafers 2.1.5.1 The same message characters as the SEMI T7
    by Automated Noncontact Scanning
    mark and appropriate checksum characters as defined
    1 3 S Standard
    by SEMI M12, and
    Z 8741 -Method of Measurement for Specular 2. 1.5.2 Character string as specified in SEMT MI2
    Glossiness
    2.1.5.3 Single density dot matrix, 5 dots horizontal and
    NOTE I: As lislcd or rcyiscd. all do
    citcd shall be the 9 dots
    i shall be used
    latest publications of adoptcd standards
    2. 1.5.4 Dot diameter shall be 100=+ 10 um (Note 4)
    2 Requirements
    2. 1.55 Character dimensions shall be as defined in
    SEMI M12, Table 1 (nominal spacing= 1.42
    III
    2. 1 The complete specification for this product
    includes all general requirements of SEMI MI except
    nominal width=0.812 mm, nominal height=1.624
    mm
    for the following
    2.1.1 The exclusion of wafers polished on both sides
    2. 1.5.6 Mark location (center of botto mmost dot
    in Section 13 of SEMI MI is deleted
    relative to the reference point of the SEM T7 mark
    shall be 1. 40+0.05 mm toward the wafer center. as
    2.1.2 Particulate contamination (oc alized light shown in Figure 1
    scatterer )requirements listed in Table 1 of SEMI M
    (Polished Wafer Defect Limits)do not apply to thes
    2.1.5.7 Mark field height, as defined by the distance
    afer. Specification criteria and test methods for
    between the centers of the topmost and bottommost dot
    automated surface inspection of large wafers are under rows of the A/N characters, shall be 1.62 +0.03 mm
    development
    (Note
    2.1.3 Wafers shall be marked with a two-dimensional 2. 1.5.8 Mark field enoh, as defined by the distance
    matrix code symbol on the back surface outside the between the centers of the leftmost and rightmost dot
    fixed quality area as soon after slicing a pactical in the columns of the A/N Cy eers, shall be 16.43 +0.07
    manner specified in SEM T7 in order to
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