MIL-PRF-19500.446D-2007.pdf

INCH-POUND MIL-PRF-19500/446D 13 September 2007 SUPERSEDING MIL-PRF-19500/446C 5 March 2002 * PERFORMANCE SPECIFICATION * SEMICONDUCTOR DEVICE, SILICON, HIGH-POWER, SINGLE PHASE, FULL WAVE BRIDGE RECTIFIER, TYPES SPA25, SPB25, SPC25, SPD25 JAN, JANTX, AND JANTXV This specification is approved for use by all Departments and Agencies of the Department of Defense. * The requirements for acquiring the product described herein shall consist of this specification sheet and MIL-PRF-19500. 1. SCOPE 1.1 Scope. This specification covers the performance requirements for silicon, single phase, full wave rectifiers. Three levels of product assurance are provided for each device type as specified in MIL-PRF-19500. 1.2 Physical dimensions. See figure 1. 1.3 Maximum ratings. Type number VRWM Bridge (1) IO1 at TC = +55C Bridge (2) IO2 at TC = +100C IF(surge) IO = 25 A dc TC = +55C tp = 8.3 ms Barometric pressure reduced trr IF = 0.5 A IR = 1.0 A Irec = 0.25 A SPA25 SPB25 SPC25 SPD25 V (pk) 100 200 400 600 A dc 25 25 25 25 A dc 15 15 15 15 A (pk) 150 150 150 150 mm Hg 8 8 8 8 s 2.5 2.5 2.5 2.5 (1) Derate from 25 A dc at +55C to 15 A dc at +100C (222 mA dc/C). (2) Derate from 15 A dc at +100C to 0 A dc at +150C (300 mA dc/C). Operating temperature: -65C to +150C. Storage ambient temperature: -65C to +150C. * Comments, suggestions, or questions on this document should be addressed to Defense Supply Center, Columbus, ATTN: DSCC-VAC, P.O. Box 3990, Columbus, OH 43218-3990, or emailed to semiconductordscc.dla.mil . Since contact information can change, you may want to verify the currency of this address information using the ASSIST Online database at http:/assist.daps.dla.mil . The documentation and process conversion measures necessary to comply with this revision shall be completed by 13 December 2007. AMSC N/A FSC 5961 Source: http:/ - Downloaded: 2008-03-05T08:06Z Check the source to verify that this is the current version before use. MIL-PRF-19500/446D 2 2. APPLICABLE DOCUMENTS * 2.1 General. The documents listed in this section are specified in sections 3, 4, or 5 of this specification. This section does not include documents cited in other sections of this specification or recommended for additional information or as examples. While every effort has been made to ensure the completeness of this list, document users are cautioned that they must meet all specified requirements of documents cited in sections 3, 4, or 5 of this specification, whether or not they are listed. 2.2 Government documents. * 2.2.1 Specifications, standards, and handbooks. The following specifications, standards, and handbooks form a part of this document to the extent specified herein. Unless otherwise specified, the issues of these documents are those cited in the solicitation or contract. * DEPARTMENT OF DEFENSE SPECIFICATIONS MIL-PRF-19500 - Semiconductor Devices, General Specification for. * DEPARTMENT OF DEFENSE STANDARDS MIL-STD-750 - Test Methods for Semiconductor Devices. * (Copies of these documents are available online at http:/assist.daps.dla.mil/quicksearch/ or http:/assist.daps.dla.mil or from the Standardization Document Order Desk, 700 Robbins Avenue, Building 4D, Philadelphia, PA 19111-5094.) 2.3 Order of precedence. In the event of a conflict between the text of this document and the references cited herein, the text of this document takes precedence. Nothing in this document, however, supersedes applicable laws and regulations unless a specific exemption has been obtained. 3. REQUIREMENTS * 3.1 General. The individual item requirements shall be as specified in MIL-PRF-19500 and as modified herein. 3.2 Qualification. Devices furnished under this specification shall be products that are manufactured by a manufacturer authorized by the qualifying activity for listing on the applicable qualified manufacturers list (QML) before contract award (see 4.2 and 6.3). 3.3 Abbreviations, symbols, and definitions. Abbreviations, symbols, and definitions used herein shall be as specified in MIL-PRF-19500. 3.4 Interface and physical dimensions. The interface and physical dimensions shall be as specified in MIL-PRF-19500 and on figure 1 herein. 3.4.1 Internal construction. The rectifier bridge shall consist of a metal and plastic encased assembly of discrete diodes. Each discrete diode shall be a glass-to-metal, ceramic-to-metal, or fused metal oxide-to-metal hermetically sealed package. No multiple diodes for each leg construction shall be permitted. The silicon die in each discrete diode shall be metallurgically bonded directly to the terminal pins. The completed assembly of diodes and other internal structures shall be encapsulated in a plastic material which polymerizes to a rigid condition by virtue of a chemical cross-linking mechanism. The rectifier bridge shall be free of voids either visible or as evidenced by failure to pass the environment test specified herein. Only those discrete diodes which have met these requirements shall be used in