MIL-PRF-19500-749-2008.pdf

MIL-PRF-19500/749 5 June 2008 PERFORMANCE SPECIFICATION SHEET SEMICONDUCTOR DEVICE, FIELD EFFECT TRANSISTOR, P-CHANNEL RADIATION HARDENED (TOTAL DOSE AND SINGLE EVENT EFFECTS), SILICON, TYPES 2N7506U8 AND 2N7506U8C, JANTXVR, JANTXVF, JANSR AND JANSF This specification is approved for use by all Departments and Agencies of the Department of Defense. The requirements for acquiring the product described herein shall consist of this specification sheet and MIL-PRF-19500. 1. SCOPE 1.1 Scope. This specification covers the performance requirements for P-channel, enhancement-mode, MOSFET, radiation hardened (total dose and single event effects (SEE), power transistor. Two levels of product assurance are provided for each device type as specified in MIL-PRF-19500, with avalanche energy maximum rating (EAS) and maximum avalanche current (IAS). See 6.5 for JANHC and JANKC die versions. 1.2 Physical dimensions. See figure 1, surface mount SMD-0.2, for U8 (metal lid) and U8C (ceramic lid). 1.3 Maximum ratings. TA = +25C, unless otherwise specified. Type PT (1) TC = +25C PT TA = +25C R JC (2) VDS VDG VGS ID1 (3) (4) TC =+25C ID2 (3) (4) TC = +100C IS IDM (5) TJ and TSTG 2N7506U8, 2N7506U8C W 23 W 1.0 C/W 5.4 V dc -100 V dc -100 V dc 20 A dc -3.1 A dc -2.0 A dc -3.1 A (pk) -12.4 C -55 to +150 (1) Derate linearly by 0.185 W/C for TC +25C. (2) See figure 2, thermal impedance curves. (3) The following formula derives the maximum theoretical ID limit. ID is limited by package and internal construction. (4) See figure 3, maximum drain current graph. (5) IDM = 4 X ID1 as calculated in note (3). AMSC N/A FSC 5961 INCH-POUND Comments, suggestions, or questions on this document should be addressed to Defense Supply Center, Columbus, ATTN: DSCC-VAC, P.O. Box 3990, Columbus, OH 43218-3990, or emailed to Semiconductordscc.dla.mil. Since contact information can change, you may want to verify the currency of this address information using the ASSIST Online database at http:/assist.daps.dla.mil/. () () T at )on ( R x R T - T = I JMDSJC CJM D MIL-PRF-19500/749 2 1.4 Primary electrical characteristics at TC = +25C. Type Min V(BR)DSS VGS = 0 VGS(TH)1 VDS VGS Max IDSS1 VGS = 0 Max rDS(on) (1) VGS = 12V, ID = ID2 EAS IAS ID = 1.0mA dc ID = 1.0 mA dc VDS = 80% of rated VDS TJ = +25C TJ = +150C 2N7506U8, 2N7506U8C V dc -100 V dc Min Max -2.0 -4.0 A dc 10 1.20 2.40 mJ 28 A -3.1 (1) Pulsed (see 4.5.1). 2. APPLICABLE DOCUMENTS 2.1 General. The documents listed in this section are specified in sections 3, 4, or 5 of this specification. This section does not include documents cited in other sections of this specification or recommended for additional information or as examples. While every effort has been made to ensure the completeness of this list, document users are cautioned that they must meet all specified requirements of documents cited in sections 3, 4, or 5 of this specification, whether or not they are listed. 2.2 Government documents. 2.2.1 Specifications, standards, and handbooks. The following specifications, standards, and handbooks form a part of this document to the extent specified herein. Unless otherwise specified, the issues of these documents are those cited in the solicitation or contract. DEPARTMENT OF DEFENSE SPECIFICATIONS MIL-PRF-19500 - Semiconductor Devices, General Specification for. DEPARTMENT OF DEFENSE STANDARDS MIL-STD-750 - Test Methods for Semiconductor Devices. (Copies of these documents are available online at http:/assist.daps.dla.mil/quicksearch/ or http:/assist.daps.dla.mil/ or from the Standardization Document Order Desk, 700 Robbins Avenue, Building 4D, Philadelphia, PA 19111-5094.) 2.3 Order of precedence. Unless otherwise noted herein or in the contract, in the event of a conflict between the text of this document and the references cited herein, the text of this document takes precedence. Nothing in this document, however, supersedes applicable laws and regulations unless a specific exemption has been obtained. MIL-PRF-19500/749 3 Dimensions Symbol Inches Millimeters Min Max Min Max Note BL .305 .321 7.75 8.15 BW .200 .226 5.08 5.74 CH (for U8) - .097 - 2.46 U8 only CH (for U8C) - .106 - 2.69 U8C only LH .010 .020 0.25 0.51 LW1 .193 .203 4.90 5.16 LW2 .076 .086 1.93 2.19 LL1 .174 .184 4.42 4.67 LL2 .074 .084 1.88 2.13 Q1 .030 .040 0.76 1.02 Q2 .030 .040 0.76 1.02 Q3 0.10 REF 0.25 REF Q4 0.10 REF 0.25 REF TERM 1 Drain TERM 2 Gate TERM 3 Source NOTES: 1. Dimensions are in inches. 2. Millimeters are given for general information only. 3. The lid shall be electrically isolated from the drain, gate and source. 4. In accordance with ASME Y14.5M, diameters are equivalent to x symbology. FIGURE 1. Physical dimensions for SMD-0.2, 2N7506U8 and 2N7506U8C. MIL-PRF-19500/749 4 3. REQUIREMENTS 3.1 General. The individual item requirements shall be as specified in MIL-PRF-19500 and as modified herein. 3.2 Qualification. Devices furnished under this specification shall be products that are manufactured by a manufactur